Insitu contact descum for self-aligned contact process

Details Insitu contact descum for self-aligned contact process Insitu contact descum for self-aligned contact process

1997-04-17

1999-03-09

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438701, 438723, 438906, 438725, H01L 213065

Patent

active

058800190

ABSTRACT:
The present invention provides a method of forming a Self-aligned contact with fewer process steps. The invention includes a three step insitu process of (1) a first descum step, (2) a dry etch step and (3) second descum step followed by (4) an isotropic etch step. The process comprises coating, exposing, and developing, and baking a photoresist layer over an insulating layer. In an important process stage, three steps are performed: (1) an insitu first descum step, (2) a dry etch step and (3) a second descum step. The dry etch step forms a first self-aligned contact opening. Next, the first contact opening is isotropically etched forming a smoother second contact opening 44. The photoresist layer 30 is then removed. Lastly, a metal layer 60 is deposited in said second self aligned contact opening 44. The invention reduces cycle time and eliminates several process steps while maintaining high yields. The smoother second contact opening 44 provides better metal adhesion.

REFERENCES:
patent: 5284547 (1994-02-01), Watanabe
patent: 5397432 (1995-03-01), Konno et al.
patent: 5468342 (1995-11-01), Nulty et al.
patent: 5468686 (1995-11-01), Kawamoto
patent: 5674357 (1997-10-01), Sun et al.
S. Wolf and R. N. Tauber, Silicon Processing for the VLSI Era vol. I Lattice Press (Calif). p. 429, 1986.

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