Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-03-21
1993-01-19
Lee, John D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257362, 257363, H01L 2978
Patent
active
051810921
ABSTRACT:
An input protection circuit includes an input protection resistor and an input protection element. The input protection resistor is connected at one end to an input pad and connected at the other end to the gate of a MOS transistor provided at the input stage of an internal circuit. The input protection element is connected between the gate of the MOS transistor and at least one of a ground terminal and a power source. The input protection resistor includes a first impurity diffused region of a second conductivity type formed in the main surface area of a semiconductor substrate of a first conductivity type, and a second impurity diffused region of the second conductivity type which is formed in the first impurity diffused region to have an impurity concentration higher than the first impurity diffused region and have a diffusion depth smaller than the first impurity diffused region.
REFERENCES:
patent: 4920445 (1990-04-01), Jun
patent: 5051860 (1991-09-01), Lee et al.
C. Duvvury et al., "ESD Protection: Design and Layout Issues For VLSI Circuits", Conference Record of the 1987 IEEE Industry Application Society Annual Meeting Part II, Catalog Number 87CH2499-2.
Kabushiki Kaisha Toshiba
Lee John D.
Wise Robert E.
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