InN/TiO 2 photosensitized electrode

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate

Reexamination Certificate

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C438S780000

Reexamination Certificate

active

07622397

ABSTRACT:
The present invention is a photosensitized electrode which absorbs sun light to obtain pairs of separated electron and hole. The photosensitized electrode is fabricated with simple procedure and has low cost. The electrode has excellent chemical resistance and is fitted to be applied in a solar cell device with enhanced sun-light absorbing ability. The present invention can be applied in an optoelectronic device or a hydrogen generator device too.

REFERENCES:
patent: 2007/0204905 (2007-09-01), Lin et al.

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