InN/InP/TiO 2 photosensitized electrode

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate

Reexamination Certificate

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C438S780000

Reexamination Certificate

active

07655575

ABSTRACT:
The present invention is a photosensitized electrode which absorbs sunlight to obtain electron-hole pair. The photosensitized electrode is fabricated with simple procedure and has low cost. The electrode has excellent chemical resist to be applied in a solar cell device with enhanced sun-light absorbing ability. The present invention can be applied in an optoelectronic device or a hydrogen generator device too.

REFERENCES:
patent: 2007/0207561 (2007-09-01), Lin et al.

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