Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2006-08-28
2009-12-01
Kunemund, Robert M (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S095000, C117S096000, C117S101000, C117S104000, C117S105000
Reexamination Certificate
active
07625448
ABSTRACT:
The invention relates to a device for depositing especially crystalline layers on at least one especially crystalline substrate in a process chamber comprising a top and a vertically opposing heated bottom for receiving the substrates. A gas-admittance body forming vertically superimposed gas-admittance regions is used to separately introduce at least one first and one second gaseous starting material, said starting materials flowing through the process chamber with a carrier gas in the horizontal direction. The gas flow homogenises in an admittance region directly adjacent to the gas-admittance body, and the starting materials are at least partially decomposed, forming decomposition products which are deposited on the substrates in a growth region adjacent to the admittance region, under continuous depletion of the gas flow. An additional gas-admittance region of the gas-admittance body is essential for one of the two starting materials, in order to reduce the horizontal extension of the admittance region.
REFERENCES:
patent: 4961399 (1990-10-01), Frijlink
patent: 6218212 (2001-04-01), Saito et al.
patent: 2003/0177977 (2003-09-01), Strauch et al.
patent: 2004/0013801 (2004-01-01), Bremser et al.
patent: 100 43 601 (2002-03-01), None
patent: 100 64 941 (2002-04-01), None
patent: 100 57 134 (2002-05-01), None
patent: 102 47 921 (2004-04-01), None
patent: 42454493 (1992-09-01), None
International Search Report, Jun. 23, 2005, 5 pages.
International Preliminary Report on Patentability and Written opinion, Oct. 4, 2006, 8 pages.
Conor Martin
Dauelsberg Martin
Kaeppeler Johannes
Strauch Gerhard Karl
Aixtron AG
Kunemund Robert M
St. Onge Steward Johnston & Reens LLC
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