4. Single-crystal, oriented-crystal, and epitaxy growth processes;
  5. Forming from vapor or gaseous state
  6. With decomposition of a precursor

Martin Dauelsberg

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Device and method for depositing one or more layers on a...

Chemistry of inorganic compounds – Silicon or compound thereof – Oxygen containing
Reexamination Certificate

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Gas-admission element for CVD processes, and device

Coating apparatus – Gas or vapor deposition
Reexamination Certificate

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Inlet system for an MOCVD reactor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Method for depositing in particular crystalline layers

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Method for depositing in particular crystalline layers, and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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