Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-12-11
2007-12-11
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S052000, C438S258000, C438S266000, C438S587000, C438S588000, C257SE21621, C257SE21622, C257SE21623, C257SE21624, C257S321000, C257S320000, C257S316000, C257S548000, C257S331000
Reexamination Certificate
active
10535941
ABSTRACT:
An information memory device capable of reading and writing of information by mechanical operation of a floating gate layer, in which a gate insulation film has a cavity (6), and a floating gate layer (5) having two stable deflection states in the cavity (6), the state stabilized by deflecting toward the channel side of transistor, and the state stabilized by deflecting toward the gate (7) side, writing and reading of information can be made by changing the stable deflection state of the floating gate layer (5) by Coulomb interactive force between the electrons (or positive holes8) accumulated in the floating gate layer (5) and external electric field, and by reading the channel current change based on the state of the floating gate layer (5).
REFERENCES:
patent: 4577215 (1986-03-01), Stewart et al.
patent: 4811078 (1989-03-01), Tigelaar et al.
patent: 4931411 (1990-06-01), Tigelaar et al.
patent: 5266509 (1993-11-01), Chen
patent: 5427968 (1995-06-01), Hong
patent: 5482879 (1996-01-01), Hong
patent: 5946549 (1999-08-01), Itoigawa et al.
patent: 6069392 (2000-05-01), Tai et al.
patent: 6146543 (2000-11-01), Tai et al.
patent: 6194272 (2001-02-01), Sung
patent: 6225162 (2001-05-01), Lin et al.
patent: 7161218 (2007-01-01), Bertin et al.
patent: 2003/0022463 (2003-01-01), Zheng
patent: 2005/0056877 (2005-03-01), Rueckes et al.
patent: 2005/0142747 (2005-06-01), Lee
patent: 2005/0167734 (2005-08-01), She et al.
patent: 2006/0022264 (2006-02-01), Mathew et al.
patent: 2006/0051920 (2006-03-01), Yamaguchi et al.
patent: 2006/0097306 (2006-05-01), Kim et al.
patent: 2006/0131569 (2006-06-01), Choi et al.
patent: 2006/0255395 (2006-11-01), Fujita et al.
patent: 2007/0015303 (2007-01-01), Bertin et al.
patent: 2007/0037350 (2007-02-01), Woo et al.
patent: 2736734 (1978-03-01), None
patent: 383011 (1990-08-01), None
patent: 429620 (1991-06-01), None
patent: 7-308080 (1995-11-01), None
patent: 9-213191 (1997-08-01), None
patent: 10004149 (1998-01-01), None
patent: 11-297931 (1999-10-01), None
patent: 2000-31397 (2000-01-01), None
J. Weckesser et al.; “Mesoscopic Correlation of Supramolecular Chirality in One-Dimensional Hydrogen-Bonded Assemblies”, Physical Review Letters, vol. 87, No. 9, Aug. 27, 2001, pp. 096101-1 to 096101-4. (Discussed in the specification).
Terada Yasushi; Electronic Materials, Kogyo Chosakai, Apr. 1993, p. 32. (Discussed in the specification).
The Institute of Electronics, Information, and Communication Engineers, Nov. 30, 1984. (Discussed in the Specification).
Ando Masahiko
Koshida Nobuyoshi
Oda Shunri
Shimada Toshikazu
Yamaguchi Shin'ya
Japan Science & Technology Agency
Lindsay, Jr. Walter
Westerman, Hattori, Daniels & Adrian , LLP.
LandOfFree
Information storage element, manufacturing method thereof,... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Information storage element, manufacturing method thereof,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Information storage element, manufacturing method thereof,... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3844474