Information storage device, and information storage method...

Details Information storage device, and information storage method... Information storage device, and information storage method...

2005-01-25

2005-01-25

Dinh, Son T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Molecular or atomic

C365S153000

Reexamination Certificate

active

06847541

ABSTRACT:
An information storage device which has a layer containing such bistable molecules that the molecular structure reversibly changes due to an isomerization reaction, at least one reaction of the isomerization reaction is caused by electric carrier injection, and the electric characteristics change as between before and after the isomerization reaction.

REFERENCES:
patent: 6198655 (2001-03-01), Heath et al.
patent: 6556470 (2003-04-01), Vincent et al.
Extended Abstracts (The 50thSpring Meeting, 2003); The Japan Society of Applied Physics and Related Societies, no. 3, pp. 100 and 1346, Mar. 27, 2003 (with English translation).
Y-K. Choi, et al., International Electron Devices Meeting, pp. 421-424, “SUB-20nm CMOS FinFET Technologies”, 2001.
Optical Materials Handbook (New Edition), pp. 494-510 (with partial English translation).

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