Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2011-06-28
2011-06-28
Kelly, Cynthia H (Department: 1722)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C430S320000
Reexamination Certificate
active
07967956
ABSTRACT:
The information recording medium of the present invention comprises at least one of the following oxide-based material layers: (I) an oxide-based material layer containing Zr, at least one element selected from the group GL1 consisting of La, Ga and In, and oxygen (O); (II) an oxide-based material layer containing M1 (where M1 is a mixture of Zr and Hf, or Hf), at least one element selected from the group GL2 consisting of La, Ce, Al, Ga, In, Mg and Y, and O; (III) an oxide-based material layer containing at least one element selected from the group GM2 consisting of Zr and Hf, at least one element selected from the group GL2, Si, and O; and (IV) an oxide-based material layer containing at least one element selected from the group GM2, at least one element selected from the group GL2, Cr, and O. This oxide-based material layer can be used, for example, as a dielectric layer.
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Translation JP-2003-242683(Aug. 2003).
“Phase-Change Optical Disk Having a Nitride Interface Layer”, Yamada et al., Japanese Journal of Applied Physics, vol. 37 (1998) pp. 2104-2110; Part 1, No. 4B, Apr. 1998.
Doi Yukako
Kojima Rie
Yamada Noboru
Hamre Schumann Mueller & Larson P.C.
Kelly Cynthia H
Panasonic Corporation
Verderame Anna L
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