Infinitely selective photoresist mask etch

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S714000, C438S723000, C134S001100

Reexamination Certificate

active

07910489

ABSTRACT:
A method for etching features into an etch layer disposed below a photoresist mask without an intermediate hardmask is provided. A plurality of etch cycles are provided. Each etch cycle comprises providing a deposition etch phase that etches features into the etch layer and deposits polymer on sidewalls of the features and over the photoresist and providing a cleaning phase that removes polymer deposited on the sidewalls.

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