Inductively coupled plasma sputter chamber with conductive mater

Details Inductively coupled plasma sputter chamber with conductive mater Inductively coupled plasma sputter chamber with conductive mater

1994-10-25

1996-10-29

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

2041921, 20429811, 20429831, 20429837, C23C 1434

Patent

active

055693636

ABSTRACT:
A shade is disposed on the inner wall of an inductively coupled plasma chamber, covering a protected zone of the wall generally opposite to the inductive coil driving the chamber, preventing accumulation of material sputtered from a wafer in this zone, and thus restricting closed paths for eddy current flow along the chamber wall, improving inductive coupling of electrical power to the plasma in the chamber.

REFERENCES:
patent: 4123316 (1978-10-01), Tsuchimoto
patent: 4431901 (1984-02-01), Hull
patent: 4486461 (1984-12-01), Ito et al.
patent: 4572759 (1986-02-01), Benzing
patent: 5099100 (1992-03-01), Bersin et al.
patent: 5217560 (1993-06-01), Kurono et al.
patent: 5234529 (1993-08-01), Johnson

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