Indirect switching and sensing of phase change memory cells

Details Indirect switching and sensing of phase change memory cells Indirect switching and sensing of phase change memory cells

2006-03-07

2006-03-07

Nguyen, Van Thu (Department: 2824)

Optics: measuring and testing

Refraction testing

Prism engaging specimen

C365S161000, C438S102000

Reexamination Certificate

active

07009694

ABSTRACT:
A method and structure for a memory cell comprising a phase change material; a heating element in thermal contact with the phase change material, wherein the heating element is adapted to induce a phase change in the phase change material; and electrical lines configured to pass current through the heating element, wherein the phase change material and the heating element are arranged in a configuration other than being electrically connected in series. The memory cell further comprises a sensing element in thermal contact with the phase change material, wherein the sensing element is adapted to detect a change in at least one physical property of the phase change material, wherein the sensing element is adapted to detect a change in a thermal conductivity of the phase change material.

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