Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-14
2006-03-14
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S232000, C257S239000, C257S250000, C257S347000, C257S763000, C257S296000, C257S307000, C257S308000, C257S309000, C257S304000, C257S310000, C438S239000, C438S238000, C438S240000, C438S241000
Reexamination Certificate
active
07012294
ABSTRACT:
The invention encompasses a method of forming a silicon nitride layer. A substrate is provided which comprises a first mass and a second mass. The first mass comprises silicon and the second mass comprises silicon oxide. A sacrificial layer is formed over the first mass. While the sacrificial layer is over the first mass, a nitrogen-containing material is formed across the second mass. After the nitrogen-containing material is formed, the sacrificial layer is removed. Subsequently, a silicon nitride layer is formed to extend across the first and second masses, with the silicon nitride layer being over the nitrogen-containing material. Also, a conductivity-enhancing dopant is provided within the first mass. The invention also pertains to methods of forming capacitor constructions.
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Ping Er-Xuan
Yin Zhiping
Baumeister B. William
Micro)n Technology, Inc.
Wells St. John P.S.
Yevsikov Victor V.
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