Indirect endpoint detection by chemical reaction and chemilumine

Details Indirect endpoint detection by chemical reaction and chemilumine Indirect endpoint detection by chemical reaction and chemilumine

1998-05-06

2000-10-03

Gulakowski, Randy

Etching a substrate: processes

Nongaseous phase etching of substrate

With measuring, testing, or inspecting

216 59, 216 60, 216 84, 216 88, 216 89, 438 7, 438693, G01N 2100

Patent

active

061268488

ABSTRACT:
Detection of the endpoint for removal of a target film overlying a stopping film by removing the target film with a process that selectively generates a chemical reaction product (for example ammonia when polishing a wafer with a nitride film in a slurry containing KOH) with one of the stopping film and the target film, converting the chemical reaction product to a separate product, producing excited molecules from the separate product, and monitoring the level of light emitted from the excited molecules as the target film is removed.

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