Independently accessed double-gate and tri-gate transistors...

Details Independently accessed double-gate and tri-gate transistors... Independently accessed double-gate and tri-gate transistors...

2006-01-18

2010-12-28

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S283000, C438S157000, C438S164000, C257S270000, C257S331000, C257S365000, C257S287000

Reexamination Certificate

active

07859053

ABSTRACT:
A method for fabricating double-gate and tri-gate transistors in the same process flow is described. In one embodiment, a sacrificial layer is formed over stacks that include semiconductor bodies and insulative members. The sacrificial layer is planarized prior to forming gate-defining members. After forming the gate-defining members, remaining insulative member portions are removed from above the semiconductor body of the tri-gate device but not the I-gate device. This facilitates the formation of metallization on three sides of the tri-gate device, and the formation of independent gates for the I-gate device.

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