Independently accessed double-gate and tri-gate transistors...

Details Independently accessed double-gate and tri-gate transistors... Independently accessed double-gate and tri-gate transistors...

2008-09-09

2008-09-09

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S157000, C438S164000, C257SE21442

Reexamination Certificate

active

10955670

ABSTRACT:
A method for forming first and second devices from first and second silicon bodies is described. A sacrificial layer allows gate regions to be defined with underlying insulating members. After the sacrificial layer and bodies are surrounded in a dielectric layer, the insulative member is removed from one of the bodies. After removal of the sacrificial layer, gate structures are formed. For one device, the gate surrounds three sides of the body, and for the other device two independent gates on the sides of the body result.

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