Independently accessed double-gate and tri-gate transistors...

Details Independently accessed double-gate and tri-gate transistors... Independently accessed double-gate and tri-gate transistors...

2006-05-02

2006-05-02

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S290000, C438S303000

Reexamination Certificate

active

07037790

ABSTRACT:
A method for fabricating double-gate and tri-gate transistors in the same process flow is described. In one embodiment, a sacrificial layer is formed over stacks that include semiconductor bodies and insulative members. The sacrificial layer is planarized prior to forming gate-defining members. After forming the gate-defining members, remaining insulative member portions are removed from above the semiconductor body of the tri-gate device but not the I-gate device. This facilitates the formation of metallization on three sides of the tri-gate device, and the formation of independent gates for the I-gate device.

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