Increasing uniformity in a refill layer thickness for a semicond

Details Increasing uniformity in a refill layer thickness for a semicond Increasing uniformity in a refill layer thickness for a semicond

1997-02-21

1999-06-08

Niebling, John F.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438405, 438400, H01L 2176

Patent

active

059100176

ABSTRACT:
A technique of producing a semiconductor device or integrated circuit produces a planarized refill layer which has a more uniform thickness after etch back. In a silicon-on-insulator (SOI) device, dummy active areas are inserted between the active areas in order to maintain the thickness of the refill layer between the mesas to insure proper isolation between the active devices. The technique is also applicable to non-SOI devices.

REFERENCES:
patent: 5234861 (1993-08-01), Roisen et al.
patent: 5264387 (1993-11-01), Beyer et al.

Affiliated with

Also associated with

Rating

Increasing uniformity in a refill layer thickness for a semicond does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Increasing uniformity in a refill layer thickness for a semicond, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Increasing uniformity in a refill layer thickness for a semicond will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1680539