Increasing stress transfer efficiency in a transistor by...

Details Increasing stress transfer efficiency in a transistor by... Increasing stress transfer efficiency in a transistor by...

2011-04-12

2011-04-12

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S299000, C257SE21632

Reexamination Certificate

active

07923338

ABSTRACT:
By forming a single spacer element and reducing the size thereof by a well-controllable etch process, a complex lateral dopant profile may be obtained at reduced process complexity compared to conventional triple spacer approaches in forming drain and source regions of advanced MOS transistors.

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“Homogeneous” & “Homogeous”, Merriam-Webster Online Dictionary. https://www.merriam-webster.com/dictionary/homogenous. Last Accessed Sep. 24, 2010.
Translation of Official Communication from German Patent Office for German Patent Application No. 10 2008 016 512.3 dated Oct. 21, 2008.

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