Semiconductor device manufacturing: process – Making passive device
Reexamination Certificate
2007-08-09
2008-11-25
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Making passive device
C438S238000, C438S382000, C257SE27047
Reexamination Certificate
active
07456074
ABSTRACT:
A method for increasing an electrical resistance of a resistor, by nitridizing a fraction of a surface layer of the resistor with nitrogen particles. An embodiment comprises heating the fraction of the surface layer by a beam of radiation or particles, such that the resistor is within a chamber that includes the nitrogen-comprising molecules. An embodiment comprises using an anodization circuit to electrolytically generate nitrogen ions in an electrolytic solution in which the resistor is immersed, wherein the nitrogen particles include the electrolytically-generated nitrogen ions. An embodiment comprises immersing the resistor in a chemical solution which includes the nitrogen particles, wherein the nitrogen particles may include nitrogen-comprising liquid molecules, nitrogen ions, or a nitrogen-comprising gas dissolved in the chemical solution under pressurization. An embodiment comprises testing the resistor during a nitridizing step to determine whether the electrical resistance of the resistor is within a tolerance.
REFERENCES:
patent: 3148129 (1964-09-01), Basseches et al.
patent: 4292384 (1981-09-01), Staughan et al.
patent: 4485370 (1984-11-01), Poisel
patent: 4533935 (1985-08-01), Mochizuki
patent: 5005101 (1991-04-01), Gallagher et al.
patent: 5232865 (1993-08-01), Manning et al.
patent: 5470780 (1995-11-01), Shishiguchi
patent: 5661503 (1997-08-01), Terai
patent: 5917286 (1999-06-01), Scholl et al.
patent: 6015728 (2000-01-01), Chou
patent: 6031250 (2000-02-01), Brandes et al.
patent: 6043516 (2000-03-01), Shulze
patent: 6127217 (2000-10-01), Madurawe et al.
patent: 6645803 (2003-11-01), Kalnitsky et al.
patent: 09-219382 (1997-08-01), None
patent: 10-207472 (1999-07-01), None
Ballantine Arne W.
Edelstein Daniel C.
Stamper Anthony K.
Canale Anthony J.
International Business Machines - Corporation
Schmeiser Olsen & Watts
Tsai H. Jey
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