Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2006-12-12
2006-12-12
Tran, Michael (Department: 2827)
Static information storage and retrieval
Read/write circuit
Precharge
C365S207000
Reexamination Certificate
active
07149138
ABSTRACT:
In one method according to an embodiment of the invention, a reference bitline is biased and a refresh period of a DRAM cell is increased. In one example of such a method, biasing the reference bitline includes applying a predetermined bias voltage. In a memory device according to one embodiment of the invention, a bias circuit includes a bias capacitor connected to a bitline and configured and arranged to receive a bias signal.
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Copy of Search Report dated Apr. 7, 2003.
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Hynix / Semiconductor Inc.
Tran Michael
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