Increased drive current by isotropic recess etch

Details Increased drive current by isotropic recess etch Increased drive current by isotropic recess etch

2006-06-13

2006-06-13

Luu, Chuong A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S297000, C438S439000, C438S589000

Reexamination Certificate

active

07060579

ABSTRACT:
A method (100) of forming a transistor includes forming a gate structure (108) over a semiconductor body and forming recesses (112) using an isotropic etch using the gate structure as an etch mask. The isotropic etch forms a recess in the semiconductor body that extends laterally in the semiconductor body toward a channel portion of the semiconductor body underlying the gate structure. The method further includes epitaxially growing silicon (114) comprising stress-inducing species in the recesses. The source and drain regions are then implanted (120) in the semiconductor body on opposing sides of the gate structure.

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