Incorporation of nitrogen into high k dielectric film

Details Incorporation of nitrogen into high k dielectric film Incorporation of nitrogen into high k dielectric film

2008-07-03

2009-08-04

McNeil, Jennifer (Department: 1794)

Stock material or miscellaneous articles

All metal or with adjacent metals

Having composition, density, or hardness gradient

C428S472000, C428S457000, C428S547000, C428S702000, C428S704000, C257S314000, C257S347000, C438S085000, C438S087000, C438S104000, C438S142000, C427S248100, C427S569000

Reexamination Certificate

active

07569284

ABSTRACT:
A high k dielectric film and methods for forming the same are disclosed. The high k material includes two peaks of impurity concentration, particularly nitrogen, such as at a lower interface and upper interface, making the layer particularly suitable for transistor gate dielectric applications. The methods of formation include low temperature processes, particularly CVD using a remote plasma generator and atomic layer deposition using selective incorporation of nitrogen in the cyclic process. Advantageously, nitrogen levels are tailored during the deposition process and temperatures are low enough to avoid interdiffusion and allow maintenance of the desired impurity profile.

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