Incorporation of carbon in silicon/silicon germanium...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Reexamination Certificate

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Details

C257S047000, C257S557000, C257S558000, C257S565000, C257S588000, C257S590000, C257S591000, C257S592000, C257S593000

Reexamination Certificate

active

10953378

ABSTRACT:
A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.

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