Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-02-06
2007-02-06
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S047000, C257S557000, C257S558000, C257S565000, C257S588000, C257S590000, C257S591000, C257S592000, C257S593000
Reexamination Certificate
active
10953378
ABSTRACT:
A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.
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Chu Jack Oon
Coolbaugh Douglas Duane
Dunn James Stuart
Greenberg David R.
Harame David L.
Sabo, Esq. William D.
Scully , Scott, Murphy & Presser, P.C.
Soward Ida M.
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