Incorporating silicon atoms into a metal oxide gate dielectric u

Details Incorporating silicon atoms into a metal oxide gate dielectric u Incorporating silicon atoms into a metal oxide gate dielectric u

1998-06-17

1999-05-25

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L 21336

Patent

active

059077808

ABSTRACT:
An integrated circuit fabrication process is provided for forming silicon dioxide in the vacancies of a gate dielectric comprising metal oxide. The gate dielectric has a relatively high dielectric constant to promote high capacitive coupling between two conductive layers separated by the gate dielectric. The gate dielectric may be used in, e.g., a MOS transistor device or an EEPROM memory cell. The silicon dioxide is formed within the gate dielectric by first incorporating silicon atoms within the gate dielectric using gas cluster ion beam implantation. Gas cluster ion beam implantation affords shallow implantation of the silicon atoms. The gate dielectric is then annealed in a diffusion furnace while being exposed to a steam- or oxygen-bearing ambient. As a result of being heated, Si atoms react with O atoms to form SiO.sub.2 which fills oxygen vacancies in the gate dielectric. Absent the oxygen vacancies, the gate dielectric is less likely to allow current to leak between the two conductive layers. The SiO.sub.2 serves to terminate dangling bonds within the gate dielectric so that hot carriers and foreign species are substantially inhibited from being trapped within the gate dielectric.

REFERENCES:
patent: 4120700 (1978-10-01), Morimoto
patent: 4559096 (1985-12-01), Friedman et al.
patent: 4929489 (1990-05-01), Dreschhoff et al.
patent: 5070046 (1991-12-01), Hu
patent: 5111355 (1992-05-01), Anand et al.
patent: 5142438 (1992-08-01), Reinberg et al.
patent: 5186718 (1993-02-01), Tepman et al.
patent: 5246884 (1993-09-01), Jaso et al.
patent: 5281554 (1994-01-01), Shimada et al.
patent: 5304503 (1994-04-01), Yoon et al.
patent: 5552337 (1996-09-01), Kwon et al.
patent: 5677015 (1997-10-01), Hasegawa
Huang, et al, "The Influence of Ge-Implantation on the Electrical Characteristics of the Ultra-Shallow Junction Formed by Using Silicide as a Diffusion Source," IEEE Electron Device Letters, vol. 17, No. 3, Mar. 1996, pp. 88-90.
Yamada et al. "Gas Cluster Ion Beam Processing for ULSI Fabrication," Reprinted from Materials Research Society Symposium Proceedings vol. 427, Advanced Metallization for Future ULSI. No Date.
Raaijamakers "Low Temperature Metal--Organic Chemical Vapor Deposition of Advanced Barrier Layers for the Microelectronics Industry," Thin Solid Films, 247 (1994) pp. 85-93.

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