Incorporating dopants to enhance the dielectric properties...

Details Incorporating dopants to enhance the dielectric properties... Incorporating dopants to enhance the dielectric properties...

2007-12-25

2007-12-25

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S648000, C438S650000, C438S785000, C257S410000, C257S411000, C257SE21274, C257SE21279, C257SE21247, C427S376200

Reexamination Certificate

active

11389643

ABSTRACT:
The present invention provides a method of forming a high-k dielectric layer on a semiconductor wafer. A metal silicate dielectric layer is initially deposited on the wafer. A dopant having dissociable oxygen is introduced into the metal silicate on the wafer. According to one embodiment the metal silicate comprises a group IV metal and the dopant is an oxide of one of an alkaline metal and an alkaline earth metal. According to another embodiment the metal silicate comprises a group III metal.

REFERENCES:
patent: 6800519 (2004-10-01), Muraoka et al.
patent: 2003/0059540 (2003-03-01), Berni et al.
patent: 2004/0029343 (2004-02-01), Seidl et al.
patent: 0 325 345 (1885-09-01), None
patent: 325345 (1989-07-01), None

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