Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-09-06
2005-09-06
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S285000, C438S287000, C438S591000, C438S931000
Reexamination Certificate
active
06939756
ABSTRACT:
A method for manufacturing a silicon carbide semiconductor device. In one embodiment, the method includes the following steps: a layer of silicon dioxide is formed on a silicon carbide substrate to create a silicon dioxide/silicon carbide interface and then nitrogen is incorporated at the silicon dioxide/silicon carbide interface for reduction in an interface trap density. The silicon carbide substrate, in one embodiment, includes a n-type 4H-silicon carbide.
REFERENCES:
patent: 5821172 (1998-10-01), Gilmer et al.
patent: 6051509 (2000-04-01), Tsuchiaki
patent: 6221700 (2001-04-01), Okuno et al.
patent: 6265327 (2001-07-01), Kobayashi et al.
patent: 6297172 (2001-10-01), Kashiwagi
patent: 6767843 (2004-07-01), Lipkin et al.
patent: 2004/0101625 (2004-05-01), Das et al.
Jarnet, P., et al, “Physical Properties of N2O and NO-Nitrided Gate Oxides Grown on 4H-SiC”, Appl. Phys. Lett. vol. 79, No. 3, Jul. 16, 2001, pp. 323-325.
Li, Hui-feng, et al., “Interffacial Characteristics of N2O and NO Nitrided SiO2 Grown on SiC by Rapid Thermal Processing”, Appl. Phys. Lett, 70(15) Apr. 14, 1997.
Lu, Chao-Yang, et al., “Effect of Process Variations and Ambient Temperature on Electron Mobility at the SiO2/4H Si-C Interface”, IEEE Transactions on Electron Devices, vol. 50, No. 7, Jul. 2003, pp. 1582-1588.
Li, Hui-Feng, et al, “Analysis of Fowler-Nordheim Injection in NO Nitrided Gate Oxide Grown on n-type 4H-SiC”, Proc. 22ndInt'l Conf. on Microelectronics (MIEL 2000) vol. 1, Nis Serbia, May 14-17, 2000, pp. 331-333.
Chung, G.Y., et al., “Improved Inversion Channel Mobility for 4H-SiC MOSFETs Following High Temperature Anneals in Nitric Oxide”, IEEE Electron Device Letters, vol. 22, No. 4, Apr. 2001, pp. 176-178.
Li, Hui-Feng, “Distribution and Chemical Bonding of N at NO Nitrided SiC/SiO2 Interface”, IEEE 1999 pp. 164-166.
Dimitrijev, S. et al, “Nitridation of Sillicon-Dioxide Films Grows on 6H Silicon Carbide”, IEEE Electron Device Letters, vol. 18, No. 5, May 1977, pp. 175-177.
Williams, J.R. et al, “Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide”, Materials Science Forum, vol. 389-393 (2002), pp. 967-972.
Chung, G.Y., et al, “Effect of Nitric Oxide Annealing on the Interface Trap . . . Silicon Carbide”, App. Phys. Lett., vol. 76, No. 13, pp. 1713-1715.
Li, H.F. , et al, “Electrical Characteristics of NO Nitrided SiO2 Grown on p-type 4H-SiC”, Proc. 21stIntl. Conf. on Microelectronics (MIEL '97) Yugoslavia, 14-1 Sep. 1997, pp. 611-612.
Li. H., Dimitrijev, S., Harrison, H.B., Improved Realiability of NO-nitrided SiO2 grown on p-type 4H-SiC, Aug. 1998, IEEE Electron Device Letters, vol. 19, Issue 8, p. 279-281.
Lai, P.T., Chakraborty, S., Chan, C.L., Cheng, Y.C., “Effects of nitridation and annealing on interface properties of thermaly oxidized SiO2/SiC metal-oxide-semiconductor system”, Jun. 19, 2000, Applied Physics Letters, vol. 76, No. 25, p. 3744-3746.
Lipkin, L.A., Palmour, J.W., “Insulator Investigation on SiC for Improved Reliability”, Mar. 1999, IEEE Transactions on Electron Devices, vol. 46, No. 3, p. 525-532.
Afanas'ev, V.V., “Electronic properties of SiO2/SiC interfaces”, 1999, Microelectronic Engineering, vol. 48, pp. 241-248.
Chung Gil-yong
Di Ventra Massimiliano
Feldman Leonard C.
McDonald Kyle
Pantelides Sokrates T.
Auburn University
Fourson George
Morris Manning & Martin
Tingkang Xia, Esq. Tim
Vanderbilt University
LandOfFree
Inclusion of nitrogen at the silicon dioxide-silicon carbide... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Inclusion of nitrogen at the silicon dioxide-silicon carbide..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Inclusion of nitrogen at the silicon dioxide-silicon carbide... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3376721