In-situ thin-film deposition method

Details In-situ thin-film deposition method In-situ thin-film deposition method

2005-10-27

2009-12-29

Rose, Kiesha L. (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C257SE21171

Reexamination Certificate

active

07638437

ABSTRACT:
Provided is an in-situ thin-film deposition method in which a TiSix/Ti layer or TiSix/Ti/TiN layer can be continuously deposited. The method serves to deposit a thin layer as a resistive contact and barrier on a loaded wafer and is performed in a thin-film deposition apparatus including a transfer chamber having a robot arm therein and a plurality of chambers installed as a cluster type on the transfer chamber. The method includes depositing a TiSixlayer on the wafer by supplying a first reactive gas containing Ti and a second reactive gas containing Si to a first chamber; and transferring the wafer to a second chamber using the transfer chamber and depositing a TiN layer on the TiSixlayer.

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Taiwan Search Report for Patent Application No. 094121143, filing date of Oct. 17, 2005.
Japanese Office Action issued on Sep. 30, 2008 for Japanese Patent Application No. 2005-311179.

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