Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2011-04-19
2011-04-19
Mai, Son L (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S201000, C365S209000
Reexamination Certificate
active
07929334
ABSTRACT:
A method of measuring resistance of a magnetic tunnel junction (MTJ) of an MRAM memory cell includes applying a voltage of a selected level to a memory cell comprising an MTJ in series with a memory cell transistor in a conducting state. A current through the memory cell is determined. A variable voltage is applied to a replica cell not having an MTJ and comprising a replica cell transistor in a conducting state. A value of the variable voltage is determined, wherein a resulting current through the replica cell is substantially the same as the current through the memory cell. The MTJ resistance is computed by taking the difference of the memory cell voltage and the determined variable replica cell voltage and dividing the result by the determined memory cell current.
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Abu-Rahma Mohamed
Rao Hari
Yoon Sei Seung
Zhu Xiaochun
Mai Son L
Pauley Nicholas J.
Qualcomm Incorporated
Talpalatsky Sam
Velasco Jonathan T.
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