In situ reduction of copper oxide prior to silicon carbide...

Details In situ reduction of copper oxide prior to silicon carbide... In situ reduction of copper oxide prior to silicon carbide...

2005-04-12

2005-04-12

Kielin, Erik (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C427S123000, C427S124000

Reexamination Certificate

active

06878628

ABSTRACT:
The invention relates generally to improved silicon carbide deposition during dual damascene processing. In one aspect of the invention, copper oxide present on a substrate is reduced at least partially to copper prior to deposition of a silicon carbide or silicon oxycarbide layer thereon. In the preferred embodiment the reduction is accomplished by contacting the substrate with one or more organic reducing agents. The reduction process may be carried out in situ, in the same reaction chamber as subsequent processing steps. Alternatively, it may be carried out in a module of a cluster tool.

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