In situ rapid thermal etch and rapid thermal oxidation

Details In situ rapid thermal etch and rapid thermal oxidation In situ rapid thermal etch and rapid thermal oxidation

1996-01-03

1999-02-09

Bowers Jr., Charles L.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438694, 438706, 438771, 438906, 438913, 134 13, H01L 21316

Patent

active

058694056

ABSTRACT:
At least both a rapid thermal etch step and a rapid thermal oxidation step are performed on a semiconductor substrate in situ in a rapid thermal processor. A method including an oxidation step followed by an etch step may be used to remove contamination and damage from a substrate. A method including a first etch step followed by an oxidation step and a second etch step may likewise be used to remove contamination and damage, and a final oxidation step may optionally be included to grow an oxide film. A method including an etch step followed by an oxidation step may also be used to grow an oxide film. Repeated alternate in situ oxidation and etch steps may be used until a desired removal of contamination or silicon damage is accomplished.

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