In-situ pre-PECVD oxide deposition process for treating SOG

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers

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438778, 438780, 438782, 438787, 438788, H01L 2131

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active

058613455

ABSTRACT:
An in situ inter-dielectric process is disclosed for forming multilevel metal structures. The process includes the steps of:

REFERENCES:
patent: 4676867 (1987-06-01), Elkins et al.
patent: 5270259 (1993-12-01), Ito et al.
patent: 5290727 (1994-03-01), Jain et al.
patent: 5319247 (1994-06-01), Matsuura
patent: 5366910 (1994-11-01), Ha et al.
patent: 5393702 (1995-02-01), Yang et al.
patent: 5399533 (1995-03-01), Pramanik et al.
patent: 5413963 (1995-05-01), Yen et al.
patent: 5429988 (1995-07-01), Huang et al.
patent: 5457073 (1995-10-01), Ouellet
C.K. Wang, L.M. Liu, H.C. Cheng, H.C. Huang & M.S. Lin, A Study of Plasma Treatments on Siloxane SOG, VMIC Conf., 1994 ISMIC-103/94/101, Jun. 7-8, pp. 101-108.
M. Matsura, Y. Ii, K. Shibata, Y. Hayashide & H. Kotani, An Advanced Interlayer Dielectric System with Partially Converted Organic SOG by Using Plasma Treatment, VMIC Conf., 1993 ISMIC-102/93/0113, Jun. 8-9, p. 113-115.
S. Itoh, Y. Homma, E. Sasaki, S. Uchimura & H. Morishima, Application of Surface Reformed Thick Spin-on-Glass to MOS Device Planarization, J. Electrochem. Soc., vol. 137, No. 4, Apr. 1990, pp. 1212-1218.

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