Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-12-17
1999-09-07
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438677, 438656, 438685, H01L 2144
Patent
active
059501073
ABSTRACT:
A method for improving interlayer dielectric to metal layer adhesion including an in-situ plasma treatment process. A metal layer which is formed on a substrate is treated with plasma prior to the deposition of the interlayer dielectric. The interlayer dielectric is deposited above the metal layer and contacts are formed through the interlayer dielectric which electrically connect the underlying metal layer to a subsequently formed metal layer. The plasma treatment step creates open molecular bonds on the surface of the metal layer which cause the interface between the metal layer and the interlayer dielectric to become more adhesive. Thus, decreasing the likelihood of delamination that degrades the electrical reliability of the device.
REFERENCES:
patent: 4837185 (1989-06-01), Yau et al.
patent: 5427666 (1995-06-01), Mueller et al.
patent: 5563105 (1996-10-01), Dobuzinsky et al.
patent: 5612253 (1997-03-01), Farahani et al.
patent: 5700711 (1997-12-01), Hsu et al.
patent: 5789040 (1998-08-01), Martinu et al.
patent: 5856238 (1999-01-01), Jung
patent: 5872064 (1999-02-01), Huff et al.
patent: 5872401 (1999-02-01), Huff et al.
Huff Brett E.
Moghadom Farhad K.
Berry Renee R.
Bowers Charles
Intel Corporation
LandOfFree
In-situ pre-ILD deposition treatment to improve ILD to metal adh does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with In-situ pre-ILD deposition treatment to improve ILD to metal adh, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and In-situ pre-ILD deposition treatment to improve ILD to metal adh will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1814909