In-situ plug fill

Details In-situ plug fill In-situ plug fill

2007-03-20

2007-03-20

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Etching and coating occur in the same processing chamber

C216S017000, C216S018000, C216S067000, C438S706000, C438S738000

Reexamination Certificate

active

10603412

ABSTRACT:
A method for forming damascene features in a dielectric layer over a barrier layer over a substrate is provided. A plurality of vias are etched in the dielectric layer to the barrier layer with a plasma etching process in the plasma processing chamber. A patterned photoresist layer is formed with a trench pattern. Within a single plasma process chamber a combination via plug deposition to form plugs in the vias over the barrier layer and trench etch is provided.

REFERENCES:
patent: 5493146 (1996-02-01), Pramanik et al.
patent: 5501893 (1996-03-01), Laermer et al.
patent: 6037249 (2000-03-01), Chiang et al.
patent: 6187685 (2001-02-01), Hopkins et al.
patent: 6261962 (2001-07-01), Bhardwaj et al.
patent: 6569777 (2003-05-01), Hsu et al.
patent: 6764810 (2004-07-01), Ma et al.
patent: 2001/0021581 (2001-09-01), Moon et al.
patent: 2003/0151020 (2003-08-01), Lee et al.
patent: 2004/0192058 (2004-09-01), Chu et al.
U.S. Appl. No. 09/972,765, filed Oct. 5, 2001, PN 6794293.
U.S. Appl. No. 10/138,041, filed May 1, 2002.

Affiliated with

Also associated with

Rating

In-situ plug fill does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with In-situ plug fill, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and In-situ plug fill will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3769201