In situ plasma process to remove fluorine residues from the...

Details In situ plasma process to remove fluorine residues from the... In situ plasma process to remove fluorine residues from the...

2005-03-29

2005-03-29

Alanko, Anita (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C134S001100, C134S022100, C438S905000

Reexamination Certificate

active

06872323

ABSTRACT:
In accordance with an embodiment of the present intention, a fluorine residue removing method includes: supplying an oxygen-containing gas and a hydrogen-containing gas into a CVD chamber; producing a plasma of a mixture of the oxygen-containing gas and the-hydrogen containing gas, so that the plasma reacts with the fluorine residue, exothermically generating water; and evacuating from the CVD chamber a product of the reaction between the plasma and the fluorine residue. For the hydrogen-containing gas, NH3is often used, and for the oxygen-containing gas, N2O, O2, or air is used. Exemplary mixtures of the oxygen-containing and the hydrogen-containing gases include 70 mol % N2O/NH3, 50 mol % N2O/NH3, and 52 mol % O2/NH3. An inert gas, such as He, Ne, Ar, or Kr, can be optionally supplied into the chamber to stabilize the plasma.

REFERENCES:
patent: 5129958 (1992-07-01), Nagashima et al.
patent: 5207836 (1993-05-01), Chang
patent: 5326723 (1994-07-01), Petro et al.
patent: 5647953 (1997-07-01), Williams et al.
patent: 5679215 (1997-10-01), Barnes et al.
patent: 5824375 (1998-10-01), Gupta
patent: 5935340 (1999-08-01), Xia et al.
patent: 6020035 (2000-02-01), Gupta et al.
patent: 6068729 (2000-05-01), Shrotriya
patent: 6105589 (2000-08-01), Vane
patent: 6251776 (2001-06-01), Ngo et al.
patent: 6417080 (2002-07-01), Yokoshima
patent: 6492276 (2002-12-01), Huang

Affiliated with

Also associated with

Rating

In situ plasma process to remove fluorine residues from the... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with In situ plasma process to remove fluorine residues from the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and In situ plasma process to remove fluorine residues from the... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3373105