In situ monitoring of wafer charge distribution in plasma...

Electricity: electrical systems and devices – Electric charge generating or conducting means – Use of forces of electric charge or field

Reexamination Certificate

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C361S230000, C438S005000

Reexamination Certificate

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07864502

ABSTRACT:
A processing system and method. The processing system includes a processing tool, an electrostatic chuck (ESC) arranged within the processing tool, and a system that at least one of detects at least one of an ESC bias spike and an ESC current spike of the ESC and determines when an ESC bias voltage is zero or exceeds a threshold value. The method includes at least one of detecting at least one of an ESC bias spike and an ESC current spike of the ESC, and determining when an ESC bias voltage is zero or exceeds a threshold value. The system and method can be used in real time ESC and plasma processing diagnostics to minimize yield loss and wafer scrap.

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