In situ etch process for insulating and conductive materials

Details In situ etch process for insulating and conductive materials In situ etch process for insulating and conductive materials

1997-03-18

1999-05-04

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438711, 438739, H01L 2100

Patent

active

058997490

ABSTRACT:
A method of etching an oxide/poly/oxide sandwich structure in which both oxide layers are anisotropically etched, and the poly layer is also isotropically etched to recess the poly from the edge of the contact walls. The oxide etch can be done using oxide to nitride etch stop technology. The process is an in situ etch, that is, a single parallel plate plasma reactor is employed.

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