In-situ etch of BARC layer during formation of local interconnec

Details In-situ etch of BARC layer during formation of local interconnec In-situ etch of BARC layer during formation of local interconnec

1997-09-05

1999-07-06

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438700, 438706, 438711, 438712, 438713, 438723, 438724, 438725, 438636, H01L 21306

Patent

active

059207965

ABSTRACT:
An in-situ etching process for creating local interconnects in a semiconductor device includes using one etching tool to: etch through an organic, or inorganic BARC layer using O.sub.2 gas, or C.sub.2 F.sub.6 /O.sub.2 gases, respectively; a masked dielectric layer to a stop layer using a mixture of C.sub.4 F.sub.8, CH.sub.3 F and argon (Ar) gasses; etch away the mask layer using a mixture of O.sub.2 and Ar gasses; and, etch through the stop layer using a mixture of CH.sub.3 F gas and O.sub.2 gas. Remaining portions of the BARC layer, whether organic or inorganic, are also removed during the in-situ etching process using appropriate gases. The method then includes depositing conductive material within the openings that were etched to form local interconnects.

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