Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-12-18
2000-05-09
Booth, Richard
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438398, 438964, H01L 218234, H01L 218242
Patent
active
060603542
ABSTRACT:
A method for forming a semiconductor memory device storage cell structure having an increased surface area. The storage cell structure has one or more rough polysilicon surfaces formed by depositing the polysilicon under conditions that result in gas phase dominant nucleation.
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Hwang Ming-Jang
McKee William R.
Tsu Robert
Booth Richard
Hoel Carlton H.
Holland Robby T.
Telecky Jr. Frederick J.
Texas Instruments Incorporated
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