In-situ deposition of stop layer and dielectric layer during for

Details In-situ deposition of stop layer and dielectric layer during for In-situ deposition of stop layer and dielectric layer during for

1997-09-05

2000-05-09

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

H01L 2172

Patent

active

060604042

ABSTRACT:
An in-situ deposition method allows for the forming of a dielectric layer suitable for use in forming a conductive path in a semiconductor wafer. The method includes depositing a thin SiO.sub.x N.sub.y stop layer on top of a semiconductor wafer within a chemical vapor deposition (CVD) reactor chamber having a low pressure, maintaining the low pressure following the deposition of the SiO.sub.x N.sub.y stop layer, and then depositing a thick TEOS oxide dielectric layer on the SiO.sub.x N.sub.y stop layer within the CVD reactor chamber. The in-situ deposition process reduces outgassing defects that would normally form at the interface between the SiON stop layer and the TEOS oxide dielectric layer.

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