Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-01-11
2005-01-11
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
Reexamination Certificate
active
06841491
ABSTRACT:
A process for fabricating a semiconductor structure comprises depositing a nitride layer on a semiconductor substrate with a first tool, and depositing an anti-reflective layer on the semiconductor substrate with the first tool. The nitride layer includes silicon and nitrogen.
REFERENCES:
patent: 5639687 (1997-06-01), Roman et al.
patent: 6130146 (2000-10-01), Chang et al.
patent: 6174590 (2001-01-01), Iyer et al.
patent: 6174644 (2001-01-01), Shieh et al.
patent: 6235456 (2001-05-01), Obok
patent: 6423631 (2002-07-01), Iyer et al.
patent: 6436812 (2002-08-01), Lee
patent: 20010012667 (2001-08-01), Ma et al.
Ramkumar Krishnaswamy
Sadoughi Sharmin
Cypress Semiconductor Corporation
Evan Law Group LLC
Le Thao P.
LandOfFree
In situ deposition of a nitride layer and of an... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with In situ deposition of a nitride layer and of an..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and In situ deposition of a nitride layer and of an... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3402822