In-situ critical dimension measurement

Optics: measuring and testing – By light interference – For dimensional measurement

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

11053300

ABSTRACT:
A method of monitoring a critical dimension of a structural element in an integrated circuit is provided comprising the following steps: collecting an optical interference endpoint signal produced during etching one or more layers to form the structural element; and determining based upon the optical interference endpoint signal the critical dimension of the structural element.

REFERENCES:
patent: 4128670 (1978-12-01), Gaensslen
patent: 5450205 (1995-09-01), Sawin et al.
patent: 5926690 (1999-07-01), Toprac et al.
patent: 6388253 (2002-05-01), Su
patent: 6423457 (2002-07-01), Bell
patent: 6625512 (2003-09-01), Goodwin
patent: 6630361 (2003-10-01), Singh et al.
patent: 6645780 (2003-11-01), Sonderman et al.
http://www.fabtech.org/site-yieldmanagement
ews/2001/08/08/03.shtml on May 13, 2004, 2 pages.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

In-situ critical dimension measurement does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with In-situ critical dimension measurement, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and In-situ critical dimension measurement will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3864466

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.