Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2001-06-28
2010-02-02
Luu, Chuong A. (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S643000, C438S653000, C438S570000
Reexamination Certificate
active
07655555
ABSTRACT:
A copper interconnect having a transition metal-silicon-nitride barrier (106). A transition metal-nitride is co-deposited with Si by reactive sputtering in a Si containing ambient to form barrier (106). The copper (110) is then deposited over the transition metal-silicon-nitride barrier (108) with good adhesion.
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Faust Richard A.
Jiang Qing-Tang
Lu Jiong-Ping
Brady III Wade J.
Garner Jacqueline J.
Luu Chuong A.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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