Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-01-31
2006-01-31
Wells, Nikita (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492200, C250S492300, C250S42300F, C250S424000
Reexamination Certificate
active
06992311
ABSTRACT:
A method for cleaning an ion implantation, comprising providing an ion implantation system, wherein the ion implantation system comprises one or more components having one or more contaminants disposed thereon. A process species is provided to the ion implantation system, wherein the process species is otherwise utilized to implant ions into a workpiece. Ions are formed from the process species, therein defining an ion source. An ion beam is then extracted from the ion source via an application of an extraction voltage to an ion extraction assembly associated with the ion source. The extraction voltage is further modulated, wherein a trajectory of the ion beam is oscillated within a predetermined range. The ion beam is consequently swept across the one or more components, thus substantially removing the one or more contaminants therefrom.
REFERENCES:
patent: 5554854 (1996-09-01), Blake
patent: 5633506 (1997-05-01), Blake
patent: 6221169 (2001-04-01), Bernstein et al.
patent: 6313905 (2001-11-01), Brugger et al.
patent: 6559462 (2003-05-01), Carpenter et al.
patent: 6573517 (2003-06-01), Sugitani et al.
patent: 2003/0042427 (2003-03-01), Sullivan et al.
Perel Alexander S.
Ring Philip J.
Axcelis Technologies Inc.
Eschweiler & Associates LLC
Wells Nikita
LandOfFree
In-situ cleaning of beam defining apertures in an ion implanter does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with In-situ cleaning of beam defining apertures in an ion implanter, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and In-situ cleaning of beam defining apertures in an ion implanter will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3568057