Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
Patent
1997-09-12
1999-07-20
Bowers, Charles
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with subsequent...
438508, 438509, H01L 21205
Patent
active
059267267
ABSTRACT:
A method of manufacturing a p-type III-V nitride compound semiconductor utilizing vapor phase epitaxy is carried out in a MOCVD reactor by growing a III-V nitride compound semiconductor in the reactor employing a reaction gas containing a p-type impurity and then annealing in-situ the nitride compound semiconductor to bring about acceptor activation, the annealing carried out at a temperature below the growth temperature of the III-V nitride compound semiconductor during reactor cooldown. A nitrogen (N) reactant or precursor is provided in the reactor during the annealing step which can produce a reactive form of N capable of suppressing surface decomposition and does not produce atomic hydrogen. Also, acceptor activation is achieved through the employment of a cap layer comprising a n-type Group III-V nitride material, e.g., n-GaN, grown on the p-doped Group III-V nitride layer preventing the occurrence of hydrogenation of the underlying p-doped layer during cooldown. This non-post-growth activation eliminates the need for a subsequent thermal anneal step since any acceptor passivation is prevented in the first instance.
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Bour David P.
Connell G.A. Neville
Scifres Donald R.
Bowers Charles
Carothers, Jr. W. Douglas
Christiansa Keith
SDL Inc.
Xerox Corporation
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