In-line processing for forming a silicon nitride film

Details In-line processing for forming a silicon nitride film In-line processing for forming a silicon nitride film

2006-06-26

2009-02-17

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S791000, C438S905000, C257SE21267, C257SE21293, C257SE21302

Reexamination Certificate

active

07491652

ABSTRACT:
A process for manufacturing semiconductor devices in an in-line processing includes the steps of: forming a silicon nitride film on a semiconductor wafer by nitrization in a reactor chamber having an inner pressure at a specific pressure; reducing the inner pressure from the specific pressure; raising the inner pressure up to the specific pressure; replacing the semiconductor wafer with another semiconductor wafer; and forming a nitride film on the another semiconductor wafer at the specific pressure.

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patent: 7074720 (2006-07-01), Arita et al.
patent: 7232492 (2007-06-01), Won et al.
patent: 7273763 (2007-09-01), Neumeier et al.
patent: 5-218014 (1993-08-01), None
patent: 10-32195 (1998-02-01), None
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Japanese Office Action dated Jun. 5, 2008, with partial English translation.

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