Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-03-07
2006-03-07
Quach, T. N. (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S253000, C438S257000, C438S301000
Reexamination Certificate
active
07008833
ABSTRACT:
The present invention discloses a novel ferroelectric transistor design using a resistive oxide film in place of the gate dielectric. By replacing the gate dielectric with a resistive oxide film, and by optimizing the value of the film resistance, the bottom gate of the ferroelectric layer is electrically connected to the silicon substrate, eliminating the trapped charge effect and resulting in the improvement of the memory retention characteristics. The resistive oxide film is preferably a doped conductive oxide in which a conductive oxide is doped with an impurity species. The doped conductive oxide is most preferred to be In2O3with the dopant species being hafnium oxide, zirconium oxide, lanthanum oxide, or aluminum oxide.
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Hsu Sheng Teng
Li Tingkai
Cordeiro David
Curtin Joseph
Quach T. N.
Ripma David C.
Sharp Laboratories of America Inc.
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