Impurity introducing apparatus and impurity introducing method

Details Impurity introducing apparatus and impurity introducing method Impurity introducing apparatus and impurity introducing method

2008-03-27

2009-12-01

Vanore, David A (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492300, C250S492100

Reexamination Certificate

active

07626184

ABSTRACT:
It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.

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