Impurity doping method

Details Impurity doping method Impurity doping method

1996-08-07

1998-12-22

Chaudhari, Chandra

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

438567, H01L 21263

Patent

active

058519068

ABSTRACT:
In order to dope impurities selectively at low temperature where the resist can be used, the invention presents an impurity doping method capable of performing not only cleaning process but also doping process at low temperature where the resist can be used. First, the active sample surface of a solid sample is exposed by irradiation with plasma, and without active irradiation with plasma, the gas or vapor containing object impurities is contacted with the active sample surface of the solid sample to dope the impurities. As a result, the impurity doping process at the time of formation of C-MOS structure or the like can be executed at low temperature so as not to spoil the function of the resist.

REFERENCES:
patent: 4465529 (1984-08-01), Arima et al.
patent: 4912065 (1990-03-01), Mizuno et al.
patent: 4937205 (1990-06-01), Nakayama et al.
1993 Symposium on VLSI Technology, May 17-19, 1993.

Affiliated with

Also associated with

Rating

Impurity doping method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Impurity doping method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Impurity doping method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2047082